6.772 Compound Semiconductor Devices

Spring 2003

Silicon nanocrystal.
Calculated valence electron density of a silicon nanocrystal. (Image courtesy of Zack Helms, Quantum Simulations Laboratory, North Carolina State University. Simulations completed using computational resources provided by the National Center for Supercomputing Applications. Image provided by the National Science Foundation Image Library.)

Course Highlights

This site consists of a complete set of lecture notes and selected student term projects.

Course Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Technical Requirements

Microsoft® Excel software is recommended for viewing the .xls files found on this course site. Free Microsoft® Excel viewer software can also be used to view the .xls files.


*Some translations represent previous versions of courses.

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Staff

Instructor:
Prof. Clifton Fonstad Jr.

Course Meeting Times

Lectures:
Two sessions / week
1.5 hours / session

Recitations:
One session / week
1 hour / session

Level

Graduate

*Translations