Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown. (Image by Jesús del Alamo.)
6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.
Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.
For any use or distribution of these materials, please cite as follows:
Jesús del Alamo and Harry Tuller, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].