Schematic diagram of modern metal-oxide semiconductor field-effect transistor (MOSFET): cross section (top), layout at the wafer surface (bottom). (Image by Prof. Jesús del Alamo.)
This course features virtually all of its course materials online, including lecture notes
, and homework assignments. This course also features exams from various semesters in the study materials
Students in this course use Prof. del Alamo's MIT Microelectronics WebLab, which is described in more detail in the tools
section. The textbook for this course is: Howe, R. T., and C. G. Sodini. Microelectronics, An Integrated Approach
. Upper Saddle River, NJ: Prentice Hall, 1997. ISBN: 0135885183.
6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits. This course is 12 units and is worth 4 Engineering Design Points.
*Some translations represent previous versions of courses.